, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2SA1358 description ? high collector-emitter breakdown voltage : v(br)ceo=-120v(min) ? complement to type 2sc3421 applications ? designed for audio frequency power amplifier applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic ib pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous base current-continuous collector power dissipation @ tc=25'c collector power dissipation @ ta=25c junction temperature storage temperature range value -120 -120 -5 -1 -0.1 10 1.5 150 -55-150 unit v v v a a w r c pin 1. better 2.collector 3. base to-126 package n r j t h - t ' d-? -*< n -b- a f 1 g * ? ' "? .i. ..*.. i * ? ? 3 dim a b c d f g h j k 0 r v "r ; o ?t v ?? d m min 10,70 7,70 2.60 0.66 3.10 4.48 2.00 1.36 15.30 170 0.40 1.17 -?j f a v j k ~~* m max 10.95 7.90 2.80 0.36 3,30 4,68 2.20 1.55 16.30 3.90 0.60 1.37 cf? r*-j ?^r nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is helieved to he both accurate and reliable at the time of going lo press. i nnvuvtir. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
silicon pnp power transistor 2SA1358 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)ebo vce(sat) vee(on) icbo iebo hfe ft cob parameter collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter on voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product output capacitance conditions lc=-10ma; ib= 0 le=-1ma; lc=0 lc= -500ma; le= -50ma ig= -500ma ; vce= -5v vcb=-120v; ie=0 veb= -5v; lc= 0 lc=-0.1a;vce=-5v lc=-0.1a;vce=-5v ie=0;vcb=-10v, ftest=1mhz min -120 -5 80 typ. 120 30 max -1.0 -1.0 -0.1 -0.1 240 unit v v v v u a m a mhz pf ? hfe classifications o 80-160 y 120-240
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